Gallium nitride, the III-V semiconductor that powered the LED lighting revolution, exhibits excellent material properties for high stability, low-loss, nonlinear, active photonic integrated circuits.
Explore New Frontiers
Check out the world’s first supercontinuum in a GaN-on-sapphire photonic integrated circuit (PIC), crafted with care by Hexisense in Switzerland for DESY in Germany.
Tackle New Challenges
Despite a robust industrial foundation, GaN PICs trail the state-of-the-art. One reason is that only GaN-on-sapphire wafers are suitable for PICs. Although standard in the LED industry, sapphire complicates PIC fabrication and design, such as the low-insertion loss edge couplers shown here.
Your Innovation Partner
With a decade of hands-on GaN prototyping experience in a world-class R&D cleanroom facility, we solved the practical issues impeding wafer-scale GaN-on-sapphire PICs. Bring your innovative ideas, and let’s work together to launch the next wave of PIC innovation!
Contact
For inquires about prototyping services please get in touch or connect with us on LinkedIn.
+41 21 211 59 05
Rue de Genève 100
1004 Lausanne
Switzerland
contact [at] hexisense.com
